N 沟道,逻辑电平,PowerTrench® MOSFET,30V,1.4A,110mΩ

Obsolete

概览

此类 N 沟道逻辑电平 MOSFET 是使用先进的 PowerTrench 工艺生产的,特别适用于最大程度降低导通电阻,同时保持卓越的开关性能。此类器件特别适用于笔记本电脑、手机、PCMCIA 卡和其他电池供电电路等低压应用,在此类应用中需要在非常小形的表面贴装封装中实现快速开关和线路内低功率损耗。

  • This product is general usage and suitable for many different applications.
  • Battery Powered Circuits

  • Notebook Computers
  • Portable Phones
  • PCMCIA Cards

  • 1.8 A,30 V。
  • RDS(ON) = 110 mΩ @ VGS = -10 V
  • RDS(ON) = 160 mΩ @ VGS = 4.5 V
  • 低栅极电荷
  • 工业标准外形SOT-23表面贴装封装采用专有SuperSOT™-3设计,具有优异的热性能和电气性能
  • 高性能沟道技术可实现极低的RDS(on)

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

Id Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

CAD Model

Pb

A

H

P

SOT-23-3

1

260

REEL

3000

N

N-Channel

PowerTrench® T1

SOT-23-3

Small Signal

Logic

0

Single

0

30

110

20

3

1.4

0.5

-

160

-

1.3

145

-

-

-

-

Price N/A

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