功率 MOSFET,-20V,49mΩ,-4.5A,单 P 沟道
Obsolete
此小外形大功率 MOSFET 使用安森美半导体的沟槽技术生产,专门用于最大程度减小门极电荷,实现超低导通电阻。此器件适用于具有低门极电荷驱动或超低导通电阻要求的应用。
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状态
CAD Models
Compliance
Package Type
Case Outline
MSL Type
MSL Temp (°C)
Container Type
Container Qty.
ON Target
Channel Polarity
Silicon Family
Package Name
Type
Gate Level
Wide SOA Mosfets
Configuration
OPN in older Technology
V(BR)DSS Min (V)
RDS(on) Max @ VGS = 10 V (mΩ)
VGS Max (V)
Vgs(th) Max (V)
Id Max (A)
PD Max (W)
RDS(on) Max @ VGS = 2.5 V (mΩ)
RDS(on) Max @ VGS = 4.5 V (mΩ)
Qg Typ @ VGS = 4.5 V (nC)
Qg Typ @ VGS = 10 V (nC)
Ciss Typ (pF)
Qgd Typ @ VGS = 4.5 V (nC)
Qrr Typ (nC)
Coss Typ (pF)
Crss Typ (pF)
Reference Price
Obsolete
Pb
A
H
P
SOT-563 / SCH-6
1
260
REEL
5000
N
P-Channel
PowerTrench® T1
NA
Small Signal
Logic
0
Single
0
-20
-
10
-1.3
-4.5
1
NA
64
-
11
NA
1.9
-
82
72
Price N/A
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