This low-profile high-power MOSFET is produced using onsemi’s trench technology, which is specifically designed to minimize gate charge and ultra low on resistance. This device is suitable for applications with low gate charge driving or ultra low on resistance requirements.
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状态
CAD Models
Compliance
Package Type
Case Outline
MSL Type
MSL Temp (°C)
Container Type
Container Qty.
ON Target
Channel Polarity
Silicon Family
Package Name
Type
Gate Level
Wide SOA Mosfets
Configuration
OPN in older Technology
V(BR)DSS Min (V)
RDS(on) Max @ VGS = 10 V (mΩ)
VGS Max (V)
Vgs(th) Max (V)
Id Max (A)
PD Max (W)
RDS(on) Max @ VGS = 2.5 V (mΩ)
RDS(on) Max @ VGS = 4.5 V (mΩ)
Qg Typ @ VGS = 4.5 V (nC)
Qg Typ @ VGS = 10 V (nC)
Ciss Typ (pF)
Qgd Typ @ VGS = 4.5 V (nC)
Qrr Typ (nC)
Coss Typ (pF)
Crss Typ (pF)
参考价格
已停产
Pb
A
H
P
SOT-563 / SCH-6
1
260
REEL
5000
No
N-Channel
PowerTrench® T1
NA
Small Signal
Logic
0
Single
0
20
-
12
1.3
2
0.8
NA
190
-
1.8
NA
0.55
-
28
21
Price N/A
More Details
已停产
Pb
A
H
P
SOT-563 / SCH-6
1
260
REEL
5000
No
N-Channel
PowerTrench® T1
NA
Small Signal
Logic
0
Single
0
20
-
12
1.3
2
0.8
NA
190
-
1.8
NA
0.55
-
28
21
Price N/A
More Details
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