Full SiC MOSFET Module, Two Channel Full SiC Boost, 1200 V, 80 mohm SiC MOSFET + 1200 V, 20 A SiC Diode

Favorite

概览

The NXH80B120MNQ0 is a power integrated module (PIM) containing a dual full SiC boost stage consisting of two 80mohm/1200V SiC MOSFETs and two 20A/1200V SiC diodes. Two additional 30A/1600V bypass rectifiers used for inrush current limit are included. An on-board thermistor is included.

  • Solar Inverter Boost Stage
  • Solar Inverter
  • UPS
  • Energy Storage Systems
  • SiC MOSFET Specification: 80 mΩ 1200 V
  • 30 A / 1600 V Bypass Diodes
  • SiC Rectifier Specification: VF = 1.4 V
  • Solderable Pins
  • Thermistor

搜寻

Close Search

产品:

1

Expand Table

Collapse Table

Share

Export

Compare

Columns

0

Product Groups:

Orderable Parts:

1

产品

状况

ECAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Configuration

VBR Max (V)

RDS(on) Typ (mΩ)

Application

Pricing ($/Unit)

Loading...

NXH80B120MNQ0SNG

Active

Pb

A

H

P

Q0

NA

0

BTRAY

24

Y

Two Channel Boost

1200

80

Solar Inverter, Energy Infrastructure

$62.1414

More Details

Show More

1-25 of 25

Products per page

Jump to :