安森美半导体推出创新的超高密度离线电源方案

PHOENIX, Ariz. – June 22, 2021 –

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Industry’s first Totem pole PFC controller provides high performance at a cost effective price point

PHOENIX, Ariz. – June 22, 2021 – ON Semiconductor® (Nasdaq:ON), driving energy efficient innovations, announces industry’s first dedicated critical conduction mode (CrM) totem pole PFC controller as a new addition to their solution set for ultra-high density offline power supplies.

In conventional PFC circuits, the rectifier bridge diodes account for around 4 W of losses in a 240 W power supply, representing around 20% of total losses. In contrast, PFC stages are typically 97% efficient and the LLC circuit achieves similar performance. However, replacing the lossy diodes with switches in a ‘totem pole’ configuration and pulling in the boost PFC function can cut down the bridge losses and significantly improve overall efficiency. Further, NCP1680 can accommodate any switch type whether it is super junction silicon MOSFET or Wide Bandgap switches such as Silicon Carbide (SiC) or Gallium Nitride (GaN) devices.

The new NCP1680 CrM totem pole PFC controller employs novel current limit architecture and line phase detection while incorporating proven control algorithms to deliver a cost-effective Totem Pole PFC solution without compromising on performance. At the heart of this IC is an internally compensated digital loop control. The innovative device employs a constant on-time CrM architecture with valley switching. Modern efficiency standards, including those that require high efficiency at light load, can also be met due to inbuilt discontinuous conduction mode (DCM) with valley synchronized turn-on during frequency fold back operation.

This highly integrated device can enable power supply designs that operate with universal mains (90 – 265 Vac) at recommended power levels up to 350 W. With 230 Vac mains input, PFC circuits based upon the NCP1680 are capable of achieving close to 99% efficiency at 300 W. Just a few simple components are required externally to realize a fully-featured totem pole PFC, thereby saving space and component cost. Further reducing component count, the cycle-by-cycle current limit is realized without the need for a Hall Effect sensor.

Housed in a tiny SOIC-16 package, the NCP1680 is also available as part of an evaluation platform that allows rapid development and debugging of advanced totem pole PFC designs.

Depending on the switch technology selected for the fast leg of the totem pole, NCP1680 can be used with either NCP51820 half bridge GaN HEMT gate driver or NCP51561 isolated SiC MOSFET gate driver.

The NCP51561 is an isolated dual-channel gate driver with 4.5 A source and 9 A sink peak current capability. The new device is suitable for fast switching of silicon power MOSFETs and SiC-based MOSFET devices , offering short and matched propagation delays. Two independent and 5 kVRMS (UL1577 rated) galvanically isolated gate driver channels can be used as two low-side, two high-side switches or a half-bridge driver with programmable dead time. An enable pin will shut down both outputs simultaneously and the NCP51561 offers other important protection functions such as independent under-voltage lockout (UVLO) for both gate drivers and the enable function.

ON Semiconductor offers a wide range of SiC MOSFETs that provide increased efficiency when compared to silicon MOSFETs. The low on resistance (RDS(on)) and compact chip size ensure low capacitance and gate charge (Qg), delivering highest efficiency in a reduced system size, thus increasing power density. ON Semiconductor has released 650 V SiC MOSFETs in TO-247-4L and D2PAK-7L packages and will continue proliferating this portfolio. In addition, ON Semiconductor has a complete portfolio of silicon based 650 V SUPERFET® III MOSFETs.

关于安森美(onsemi)

安森美onsemi, 纳斯达克股票代码:ON)正推动颠覆性创新,帮助建设更美好的未来。公司专注于汽车和工业终端市场,正加速推动大趋势的变革,包括汽车功能电子化和安全、可持续能源网、工业自动化以及5G和云基础设施等。安森美以高度差异化的创新产品组合,创造智能电源和感知技术,解决世界上最复杂的挑战,并引领创建一个更安全、更清洁、更智能的世界。了解更多请访问:http://www.onsemi.cn

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