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AEC Q101 qualified Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construction. Provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss offers optimum performance for both hard and soft switching topology in automotive application.
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V(BR)CES Typ (V)
IC Max (A)
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Reference Price
AFGHL25T120RHD
Pb
A
H
P
TO-247-3LD
NA
0
TUBE
450
F
-
1200
40
1.84
1.43
0.77
1.94
159
0
189
8
~NA~
130
Yes
Price N/A
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