IGBTs | AFGHL25T120RHD

IGBT - Automotive Grade low cost 1200 V 25 A

已停产

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概览

AEC Q101 qualified Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construction. Provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss offers optimum performance for both hard and soft switching topology in automotive application.

  • HEV-EV PTC heater
  • HEV-EV e-compressor
  • HEV-EV on board charger
  • Electric vehicles
  • Hybrid electric vehicles
  • AEC Q101 qualified
  • Tight Parameter distribution
  • Low Vcesat
  • Low Eoff & Eon

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

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ON Target

Family

V(BR)CES Typ (V)

IC Max (A)

VCE(sat) Typ (V)

VF Typ (V)

Eoff Typ (mJ)

Eon Typ (mJ)

Trr Typ (ns)

Irr Typ (A)

Gate Charge Typ (nC)

Short Circuit Withstand (µs)

EAS Typ (mJ)

PD Max (W)

Co-Packaged Diode

参考价格

AFGHL25T120RHD

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已停产

CAD Model

Pb

A

H

P

TO-247-3LD

340CX

NA

0

TUBE

450

No

-

1200

40

1.84

1.43

0.77

1.94

159

0

189

8

~NA~

130

Yes

Price N/A

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