IGBTs | AFGHL25T120RWD

IGBT - Automotive Grade 1200 V 25 A

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概览

AEC Q101 qualified Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop VII Trench construction. Provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss offers optimum performance for both hard and soft switching topology in automotive application.

  • HEV-EV PTC heater
  • HEV-EV e-compressor
  • HEV-EV on board charger

  • Electric vehicles
  • Hybrid electric vehicles

  • AEC Q101 qualified
  • Tight Parameter distribution
  • Low Vcesat
  • Low Eoff & Eon

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Family

V(BR)CES Typ (V)

IC Max (A)

VCE(sat) Typ (V)

VF Typ (V)

Eoff Typ (mJ)

Eon Typ (mJ)

Trr Typ (ns)

Irr Typ (A)

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EAS Typ (mJ)

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Co-Packaged Diode

参考价格

AFGHL25T120RWD

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量产中

CAD Model

Pb

A

H

P

TO-247-3LD

340CX

NA

0

TUBE

450

No

FS7

1200

25

1.38

1.71

~NA~

~NA~

133

22

113

6

~NA~

405

Yes

$4.329

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