IGBTs | AFGHL50T65SQDC

混合型 IGBT，650V，50A，场截止 4 沟槽 IGBT，带 SiC-SBD

量产中

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概览

安森美半导体的新型混合 IGBT 系列采用新型场截止 IGBT 和 SiC SBD 技术，为硬开关应用提供了最佳性能。该器件将硅基 IGBT 与 SiC 肖特基势垒二极管联合封装，在硅基解决方案的较低性能和全碳化硅解决方案的较高成本之间实现了绝佳平衡。

  • Automotive
  • Industrial Inverter
  • DC-DC Converter
  • PFC, Totem Pole Bridgeless
  • Hard Switching
  • xEV On & Off board charger
  • UPS
  • Solar Inverter
  • HVAC
  • Copacked with SiC schottky barrier diode
  • Automotive Qualified
  • Maximum Junction Temperature, Tj=175°C
  • Very low switching and conduction losses
  • Positive temperature co-efficient
  • 100% of the parts are dynamically tested
  • Tight parameter distribution

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V(BR)CES Typ (V)

IC Max (A)

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Irr Typ (A)

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参考价格

AFGHL50T65SQDC

联系销售

量产中

CAD Model

Pb

A

H

P

TO-247-3LD

340CX

NA

0

TUBE

450

Yes

-

650

50

1.6

1.45

-

-

-

-

94

-

-

-

Yes

$5.9999

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可靠性数据

Die Related Summary Data

Device: AFGHL50T65SQDC

Equivalent to wafer fab process: IGBT,SIC

产品技术

产品技术

等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

IGBT,SIC

0

61928156

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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