IGBTs | AFGHL50T65SQDC

混合型 IGBT，650V，50A，场截止 4 沟槽 IGBT，带 SiC-SBD

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安森美半导体的新型混合 IGBT 系列采用新型场截止 IGBT 和 SiC SBD 技术，为硬开关应用提供了最佳性能。该器件将硅基 IGBT 与 SiC 肖特基势垒二极管联合封装，在硅基解决方案的较低性能和全碳化硅解决方案的较高成本之间实现了绝佳平衡。

  • Automotive
  • Industrial Inverter
  • DC-DC Converter
  • PFC, Totem Pole Bridgeless
  • Hard Switching

  • xEV On & Off board charger
  • UPS
  • Solar Inverter
  • HVAC

  • Copacked with SiC schottky barrier diode
  • Automotive Qualified
  • Maximum Junction Temperature, Tj=175°C
  • Very low switching and conduction losses
  • Positive temperature co-efficient
  • 100% of the parts are dynamically tested
  • Tight parameter distribution

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AFGHL50T65SQDC

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A

H

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TO-247-3LD

340CX

NA

0

TUBE

450

Y

-

650

50

1.6

1.45

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-

-

-

94

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-

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$5.9999

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