IGBTs | FGA3060ADF

IGBT，600V，30A 场截止沟槽

Obsolete

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概览

这款 ADF IGBT 系列采用了场截止沟槽第 3 代 IGBT，提供极低的 Vce(sat)和更快的开关特性，具有出色的能效。这种技术针对各种 PFC（功率因数校正）拓扑结构进行了完全优化；单升压，多沟道交错等，具备超过 20KHz 的开关性能。TO3P 封装为更广泛的 SOA 提供超低热阻，保证系统的稳定性。

  • 最大结温： TJ = 175°C
  • 正温度系数，易于并联运行
  • 高电流能力
  • 低饱和电压： VCE(sat) = 1.8 V（典型值） @ IC = 30 A
  • ILM(1) 部件 100% 检测
  • 高输入阻抗
  • 快速开关
  • 紧密的参数分布
  • 符合 RoHS 标准

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MSL Type

MSL Temp (°C)

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V(BR)CES Typ (V)

IC Max (A)

VCE(sat) Typ (V)

VF Typ (V)

Eoff Typ (mJ)

Eon Typ (mJ)

Trr Typ (ns)

Irr Typ (A)

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Short Circuit Withstand (µs)

EAS Typ (mJ)

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FGA3060ADF

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Obsolete

CAD Model

Pb

A

H

P

TO-3P-3L

340BZ

NA

0

TUBE

450

N

-

600

30

1.8

1.6

0.165

0.96

26

-

37.4

-

-

176

Yes

Price N/A

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可靠性数据

Die Related Summary Data

Device: FGA3060ADF

Equivalent to wafer fab process: 3B,IJ

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等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

3B,IJ

0

1915930880

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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