IGBTs | FGA30N120FTD

IGBT，1200V，30A，场截止沟槽

Obsolete

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概览

安森美半导体的 1200V 沟槽 IGBT 系列采用先进的场截止沟槽技术，为软开关应用提供出色的导通和开关性能。该器件可以在并行配置下运行，具有优异的雪崩耐用性。该器件适用于电感加热和微波炉。

  • 消费型设备

  • 场截止沟道技术
  • 高速开关
  • 低饱和电压：VCE(sat) = 1.6V @ IC = 30A
  • 高输入阻抗

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Family

V(BR)CES Typ (V)

IC Max (A)

VCE(sat) Typ (V)

VF Typ (V)

Eoff Typ (mJ)

Eon Typ (mJ)

Trr Typ (ns)

Irr Typ (A)

Gate Charge Typ (nC)

Short Circuit Withstand (µs)

EAS Typ (mJ)

PD Max (W)

Co-Packaged Diode

Reference Price

FGA30N120FTDTU

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Obsolete

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CAD Model

Pb

A

H

P

TO-3P-3L

340BZ

NA

0

TUBE

450

N

-

1200

30

1.6

1.3

1.16

0.54

775

43

208

-

-

339

Yes

Price N/A

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可靠性数据

Die Related Summary Data

Device: FGA30N120FTDTU

Equivalent to wafer fab process: 3B,IL

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等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

3B,IL

1

1920107056

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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