IGBTs | FGA30N120FTD

IGBT，1200V，30A，场截止沟槽

Obsolete

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概览

安森美半导体的 1200V 沟槽 IGBT 系列采用先进的场截止沟槽技术，为软开关应用提供出色的导通和开关性能。该器件可以在并行配置下运行，具有优异的雪崩耐用性。该器件适用于电感加热和微波炉。

  • 消费型设备

  • 场截止沟道技术
  • 高速开关
  • 低饱和电压：VCE(sat) = 1.6V @ IC = 30A
  • 高输入阻抗

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MSL Type

MSL Temp (°C)

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V(BR)CES Typ (V)

IC Max (A)

VCE(sat) Typ (V)

VF Typ (V)

Eoff Typ (mJ)

Eon Typ (mJ)

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Irr Typ (A)

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Short Circuit Withstand (µs)

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FGA30N120FTDTU

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Obsolete

CAD Model

Pb

A

H

P

TO-3P-3L

340BZ

NA

0

TUBE

450

N

-

1200

30

1.6

1.3

1.16

0.54

775

43

208

-

-

339

Yes

Price N/A

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可靠性数据

Die Related Summary Data

Device: FGA30N120FTDTU

Equivalent to wafer fab process: 3B,IL

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等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

3B,IL

1

1920107056

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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