IGBTs | FGA40T65SHDF

IGBT，650 V，40A，场截止沟槽

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概览

安森美半导体的新型场截止第 3 代 IGBT 系列采用新型场截止 IGBT 技术，提供了卓越导通和开关性能，以及简便的并行运行。该器件非常适合谐振或软开关应用，比如电感加热和 MWO。

  • 最大结温： TJ = 175°C
  • 正温度系数，易于并联运行
  • 高电流能力
  • 低饱和电压： VCE(sat)=1.45 V（典型值） @ IC = 40 A
  • 部件 100% 经过 ILM(1) 检测
  • 高输入阻抗
  • 快速开关
  • 紧密的参数分布
  • 符合 RoHS 标准

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V(BR)CES Typ (V)

IC Max (A)

VCE(sat) Typ (V)

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FGA40T65SHDF

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Last Shipments

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Pb

A

H

P

TO-3P-3L

340BZ

NA

0

TUBE

450

N

-

650

40

1.45

1.5

0.44

1.22

238

-

68

-

-

268

Yes

Price N/A

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可靠性数据

Die Related Summary Data

Device: FGA40T65SHDF

Equivalent to wafer fab process: 3B,IJ

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等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

3B,IJ

0

1915930880

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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