IGBTs | FGAF20N60SMD

IGBT，600V，20A，场截止

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概览

安森美半导体的新型场截止第 2 代 IGBT 系列采用新型场截止 IGBT 工艺，为低导通和开关损耗至关重要的消费设备、运动控制和家用电器提供了最佳性能。

  • 消费型设备
  • 运动控制-家用设备

  • 最大结温 TJ = 175°C
  • 正温度系数，易于并联运行
  • 高电流能力
  • 低饱和电压： VCE(sat) = 1.7 V（典型值） @ IC = 20A
  • 高输入阻抗
  • 快速开关： EOFF =7uJ/A
  • 紧密的参数分布
  • 符合 RoHS 标准

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V(BR)CES Typ (V)

IC Max (A)

VCE(sat) Typ (V)

VF Typ (V)

Eoff Typ (mJ)

Eon Typ (mJ)

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Irr Typ (A)

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FGAF20N60SMD

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CAD Model

Pb

A

H

P

TO-3PF-3L

340AH

NA

0

TUBE

360

N

-

600

20

1.7

2.3

0.141

0.452

88.2

-

64

-

-

75

Yes

Price N/A

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可靠性数据

Die Related Summary Data

Device: FGAF20N60SMD

Equivalent to wafer fab process: 3B,IL

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等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

3B,IL

1

1920107056

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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