IGBTs | FGAF40N60UF

IGBT，600V，PT

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概览

安森美半导体的 IGBT 具有低导通和开关损耗。UF 系列设计适用于必须具备高速开关功能的应用，例如通用逆变器和 PFC。

  • 运动控制-家用设备

  • 高速开关：Eoff =12uJ/A
  • 低饱和电压：VCE(sat) = 2.3 V @ IC = 20A
  • 高输入阻抗

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Family

V(BR)CES Typ (V)

IC Max (A)

VCE(sat) Typ (V)

VF Typ (V)

Eoff Typ (mJ)

Eon Typ (mJ)

Trr Typ (ns)

Irr Typ (A)

Gate Charge Typ (nC)

Short Circuit Withstand (µs)

EAS Typ (mJ)

PD Max (W)

Co-Packaged Diode

Reference Price

FGAF40N60UFTU

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Active

CAD Model

Pb

A

H

P

TO-3PF-3L

340AH

NA

0

TUBE

360

Y

-

600

20

2.3

-

0.13

0.47

-

-

77

-

-

100

No

$1.4549

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可靠性数据

Die Related Summary Data

Device: FGAF40N60UFTU

Equivalent to wafer fab process: IGBT

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等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

IGBT

1

2930462991

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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