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安森美半导体的 IGBT 具有低导通和开关损耗。UF 系列设计适用于必须具备高速开关功能的应用,例如通用逆变器和 PFC。
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MSL Type
MSL Temp (°C)
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V(BR)CES Typ (V)
IC Max (A)
VCE(sat) Typ (V)
VF Typ (V)
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Eon Typ (mJ)
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Irr Typ (A)
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Co-Packaged Diode
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FGAF40N60UFTU
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可靠性数据
Die Related Summary Data
Device: FGAF40N60UFTU
Equivalent to wafer fab process: IGBT
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等效器件小时
平均故障间隔时间/平均无故障时间(按小时计算)
FITS
IGBT
1
2930462991
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Re-calculate Data
Data is based on the following assumptions.
Note: The temperature and confidence level may be adjusted to your requirements.
Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)