IGBTs | FGH40N65UF_F085

IGBT，650V，40A，1.8V，TO-247，场截止

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概览

安森美半导体的新型场截止 IGBT 系列采用场截止 IGBT 技术，为汽车充电器、逆变器和低导通和开关损耗至关重要的其他应用提供最佳性能。

  • 高电流能力
  • 低饱和电压： VCE(sat) = 1.8 V (IC = 40 A)
  • 高输入阻抗
  • 快速开关
  • 符合RoHS标准
  • 符合 AEC-Q101 汽车行业标准要求

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MSL Temp (°C)

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V(BR)CES Typ (V)

IC Max (A)

VCE(sat) Typ (V)

VF Typ (V)

Eoff Typ (mJ)

Eon Typ (mJ)

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Irr Typ (A)

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FGH40N65UFDTU-F085

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CAD Model

Pb

A

H

P

TO-247-3

340CK

NA

0

TUBE

450

N

-

650

80

-

1.8

0.5

1.28

65

-

119

-

-

290

-

Price N/A

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可靠性数据

Die Related Summary Data

Device: FGH40N65UFDTU-F085

Equivalent to wafer fab process: 3B,IM

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等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

3B,IM

0

975477967

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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