IGBTs | FGH4L40T120SWD

IGBT - 1200 V 40 A IGBT in TO247-4L

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Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop VII Trench construction. Provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss offers optimum performance for both hard and soft switching topology in industrial application.

  • UPS
  • Solar
  • Energy Storage

  • Solar Inverter
  • UPS

  • Tight Parameter distribution
  • Low Vcesat
  • Low Eoff & Eon

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V(BR)CES Typ (V)

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FGH4L40T120SWD

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CAD Model

Pb

A

H

P

TO-247-4

340CJ

NA

0

TUBE

450

F

FS7

1200

40

1.7

1.94

1.14

1.38

192

26

148

~NA~

~NA~

384

Yes

$3.1286

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