IGBTs | FGH50T65SQD-F155

IGBT，650V，50A，场截止 4 沟槽

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概览

安森美半导体的新型场截止第 4 代 IGBT 系列采用新型场截止 IGBT 技术，为太阳能逆变器、UPS、焊接机、电信、ESS 和 PFC 等低导通和开关损耗至关重要的应用提供优异性能。

  • Industrial inverter
  • UPS
  • Welder
  • PFC
  • Maximum Junction Temperature: TJ =175°C
  • Positive Temperature Co-efficient for Easy Parallel Operating
  • High Current Capability
  • Low Saturation Voltage: VCE(sat) =1.6 V(Typ.) @ IC = 75 A
  • 100% of the Parts Tested for ILM(1)
  • High Input Impedance
  • Fast Switching
  • Tighten Parameter Distribution
  • RoHS Compliant

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V(BR)CES Typ (V)

IC Max (A)

VCE(sat) Typ (V)

VF Typ (V)

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FGH50T65SQD-F155

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Active

CAD Model

Pb

A

H

P

TO-247-3

340CH

NA

0

TUBE

450

Y

-

650

-

-

2.2

0.11

0.402

-

-

99

-

-

268

-

$1.887

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