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飞兆半导体的新型场截止沟道 IGBT 系列产品采用创新型场截止沟道 IGBT 技术,为光伏逆变器、UPS、焊机和数字功率产生器等低导通和开关损耗至关重要的应用提供了最佳性能。
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CAD Models
Compliance
Package Type
Case Outline
MSL Type
MSL Temp (°C)
Container Type
Container Qty.
ON Target
Family
V(BR)CES Typ (V)
IC Max (A)
VCE(sat) Typ (V)
VF Typ (V)
Eoff Typ (mJ)
Eon Typ (mJ)
Trr Typ (ns)
Irr Typ (A)
Gate Charge Typ (nC)
Short Circuit Withstand (µs)
EAS Typ (mJ)
PD Max (W)
Co-Packaged Diode
Reference Price
FGH75T65UPD
Pb
A
H
P
TO-247-3
NA
0
TUBE
450
Y
-
650
75
1.65
-
-
-
127
-
-
-
-
-
Yes
$3.0028
More Details
FGH75T65UPD-F155
Pb
A
H
P
TO-247-3
NA
0
TUBE
450
Y
-
650
-
-
-
-
-
-
-
-
-
-
-
-
$3.1543
More Details
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可靠性数据
Die Related Summary Data
Device: FGH75T65UPD
Equivalent to wafer fab process: 3B,IL
产品技术
产品技术
等效器件小时
平均故障间隔时间/平均无故障时间(按小时计算)
FITS
3B,IL
1
1920107056
More Details
Re-calculate Data
Data is based on the following assumptions.
Note: The temperature and confidence level may be adjusted to your requirements.
Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)