IGBTs | FGY100T65SCDT

IGBT，场截止沟槽，短路额定值，650 V，100 A

量产中

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概览

安森美半导体的新型场截止第 3 代 IGBT 系列采用新型场截止 IGBT 技术，为太阳能、UPS、电信、ESS 和 HVAC 应用等低导通和开关损耗至关重要的应用提供最佳性能。

  • Solar
  • UPS
  • Motor Control
  • ESS
  • HVAC
  • Maximum Junction Temperature: TJ = 175°C
  • Positive Temperature Co-efficient for Easy Parallel Operating
  • High Current Capability
  • Low Saturation Voltage: VCE(sat) = 1.5 V (Typ.) @ IC = 100 A
  • High Input Impedance
  • Fast Switching
  • Short Circuit Rated 5 us
  • Tighten Parameter Distribution
  • These Devices are Pb−Free and are RoHS Compliant

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MSL Type

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V(BR)CES Typ (V)

IC Max (A)

VCE(sat) Typ (V)

VF Typ (V)

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Eon Typ (mJ)

Trr Typ (ns)

Irr Typ (A)

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EAS Typ (mJ)

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Co-Packaged Diode

参考价格

FGY100T65SCDT

联系销售

量产中

CAD Model

Pb

A

H

P

TO-247-3

340CD

NA

0

TUBE

450

Yes

-

650

100

1.5

1.68

5.2

9.7

62

-

157

5

-

750

Yes

$7.7279

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可靠性数据

Die Related Summary Data

Device: FGY100T65SCDT

Equivalent to wafer fab process: 3B,IJ

产品技术

产品技术

等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

3B,IJ

1

6249407224

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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