IGBTs | FGY40T120SMD

IGBT，1200V，40A，场截止沟槽

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概览

安森美半导体的新型场截止沟槽 IGBT 系列采用创新的场截止沟槽 IGBT 技术，为太阳能逆变器、UPS、焊接机和 PFC 等硬开关应用提供最佳性能。

  • FS 沟道技术，正温度系数
  • 高速开关
  • 低饱和电压： VCE(sat)= 1.8 V @ IC = 40 A
  • ILM(1)部件100%检测
  • 高输入阻抗
  • 符合 RoHS 标准

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

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ON Target

Family

V(BR)CES Typ (V)

IC Max (A)

VCE(sat) Typ (V)

VF Typ (V)

Eoff Typ (mJ)

Eon Typ (mJ)

Trr Typ (ns)

Irr Typ (A)

Gate Charge Typ (nC)

Short Circuit Withstand (µs)

EAS Typ (mJ)

PD Max (W)

Co-Packaged Diode

Reference Price

FGY40T120SMD

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Active

CAD Model

Pb

A

H

P

TO-247-3

340CD

NA

0

TUBE

450

Y

FS7

1200

40

1.8

3.8

1.1

2.7

200

-

370

-

-

882

Yes

$6.21

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