IGBTs | FGY40T120SMD

IGBT，1200V，40A，场截止沟槽

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概览

安森美半导体的新型场截止沟槽 IGBT 系列采用创新的场截止沟槽 IGBT 技术，为太阳能逆变器、UPS、焊接机和 PFC 等硬开关应用提供最佳性能。

  • FS 沟道技术，正温度系数
  • 高速开关
  • 低饱和电压： VCE(sat)= 1.8 V @ IC = 40 A
  • ILM(1)部件100%检测
  • 高输入阻抗
  • 符合 RoHS 标准

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Family

V(BR)CES Typ (V)

IC Max (A)

VCE(sat) Typ (V)

VF Typ (V)

Eoff Typ (mJ)

Eon Typ (mJ)

Trr Typ (ns)

Irr Typ (A)

Gate Charge Typ (nC)

Short Circuit Withstand (µs)

EAS Typ (mJ)

PD Max (W)

Co-Packaged Diode

Reference Price

FGY40T120SMD

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CAD Model

Pb

A

H

P

TO-247-3

340CD

NA

0

TUBE

450

Y

FS7

1200

40

1.8

3.8

1.1

2.7

200

-

370

-

-

882

Yes

$6.21

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可靠性数据

Die Related Summary Data

Device: FGY40T120SMD

Equivalent to wafer fab process: 3B,IK

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等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

3B,IK

0

831217026

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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