IGBTs | HGTG18N120BN

1200 V NPT IGBT

Obsolete

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概览

HGTG18N120BN 基于非穿通 (NPT) IGBT 设计。 该 IGBT 非常适合许多工作频率中等，而低导通损耗又至关重要的高压开关应用，如 UPS、太阳能逆变器、电机控制和电源。

  • 不间断电源
  • 其他工业

  • 26 A、1200 V、TC = 110°C
  • 低饱和电压： VCE(sat)=2.45 V，需 IC=18 A
  • 典型下降时间。 . . . . . . . . . . . . . . 140 ns，需 TJ=150°C
  • 短路额定值
  • 低导通损耗

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HGTG18N120BN

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CAD Model

Pb

A

H

P

TO-247-3

340CK

NA

0

TUBE

450

N

-

1200

26

2.45

-

-

-

-

-

-

-

-

-

No

Price N/A

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可靠性数据

Die Related Summary Data

Device: HGTG18N120BN

Equivalent to wafer fab process: IGBT

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等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

IGBT

1

2930462991

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Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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