1200 V NPT IGBT

Obsolete

概览

HGTG18N120BN 基于非穿通 (NPT) IGBT 设计。 该 IGBT 非常适合许多工作频率中等,而低导通损耗又至关重要的高压开关应用,如 UPS、太阳能逆变器、电机控制和电源。

  • 不间断电源
  • 其他工业

  • 26 A、1200 V、TC = 110°C
  • 低饱和电压: VCE(sat)=2.45 V,需 IC=18 A
  • 典型下降时间。 . . . . . . . . . . . . . . 140 ns,需 TJ=150°C
  • 短路额定值
  • 低导通损耗

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Family

V(BR)CES Typ (V)

IC Max (A)

VCE(sat) Typ (V)

VF Typ (V)

Eoff Typ (mJ)

Eon Typ (mJ)

Trr Typ (ns)

Irr Typ (A)

Gate Charge Typ (nC)

Short Circuit Withstand (µs)

EAS Typ (mJ)

PD Max (W)

Co-Packaged Diode

Reference Price

HGTG18N120BN

Obsolete

CAD Model

Pb

A

H

P

TO-247-3

NA

0

TUBE

450

N

-

1200

26

2.45

-

-

-

-

-

-

-

-

-

No

Price N/A

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