IGBTs | HGTG30N60A4

IGBT，600V，SMPS

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概览

HGTG30N60A4 同时具有 MOSFET 的高输入阻抗以及双极晶体管的低导通状态损耗的最佳特性。此 IGBT 适用于务必保证低导通损耗的、在高频率下运行的多种高电压开关应用。该器件已针对 UPS 和电焊机等快速开关应用进行了优化。

  • 其他工业

  • 60A, 600V @ TC = 110°C
  • 低饱和电压：V CE(sat) = 1.8 V，需 I C = 30 A
  • 典型下降时间。. . . . . . . . . TJ = 125°C时为58ns
  • 低传导损耗

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MSL Type

MSL Temp (°C)

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Family

V(BR)CES Typ (V)

IC Max (A)

VCE(sat) Typ (V)

VF Typ (V)

Eoff Typ (mJ)

Eon Typ (mJ)

Trr Typ (ns)

Irr Typ (A)

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EAS Typ (mJ)

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Co-Packaged Diode

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HGTG30N60A4

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Last Shipments

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CAD Model

Pb

A

H

P

TO-247-3

340CK

NA

0

TUBE

450

N

-

600

60

1.8

-

0.24

0.28

-

-

225

-

-

463

No

Price N/A

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可靠性数据

Die Related Summary Data

Device: HGTG30N60A4

Equivalent to wafer fab process: IGBT

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等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

IGBT

1

2930462991

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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