IGBTs | HGTG30N60A4

IGBT，600V，SMPS

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HGTG30N60A4 同时具有 MOSFET 的高输入阻抗以及双极晶体管的低导通状态损耗的最佳特性。此 IGBT 适用于务必保证低导通损耗的、在高频率下运行的多种高电压开关应用。该器件已针对 UPS 和电焊机等快速开关应用进行了优化。

  • 其他工业
  • 60A, 600V @ TC = 110°C
  • 低饱和电压：V CE(sat) = 1.8 V，需 I C = 30 A
  • 典型下降时间。. . . . . . . . . TJ = 125°C时为58ns
  • 低传导损耗

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HGTG30N60A4

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Last Shipments

CAD Model

Pb

A

H

P

TO-247-3

340CK

NA

0

TUBE

450

N

-

600

60

1.8

-

0.24

0.28

-

-

225

-

-

463

No

Price N/A

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