IGBTs | HGTP12N60C3D

600V, UFS IGBT

Obsolete

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概览

此MOS栅极高压开关器件系列充分融合了MOSFET和双极性晶体管的最佳功能。 该器件具有 MOSFET 的高输入阻抗以及双极晶体管的低通态导通损耗。 低得多的通态压降仅在25°C到150°C之间适度变化。 使用的IGBT是开发类型TA49123。 反平行与IGBT中使用的二极管是开发类型TA49188。该IGBT非常适合许多工作频率中等，而低传导损耗又至关重要的高压开关应用。以前的开发类型为TA49182。

  • 其他工业

  • 24 A、600 V，需 TC = 25°C
  • TJ = 150°C 时的典型下降时间................210 ns
  • 短路额定值
  • 低导通损耗
  • 超快速反并联二极管

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HGTP12N60C3D

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Obsolete

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CAD Model

Pb

A

H

P

TO-220-3

340AT

NA

0

TUBE

800

N

-

600

12

1.65

-

-

-

32

-

-

-

-

-

Yes

Price N/A

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可靠性数据

Die Related Summary Data

Device: HGTP12N60C3D

Equivalent to wafer fab process: 2F,3B

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等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

2F,3B

0

552010123

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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