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HGTP3N60A4 结合了 MOSFET 的高输入阻抗,以及双极晶体管的低导通状态损耗最佳特性。此 IGBT 适用于务必保证低导通损耗的、在高频率下运行的多种高电压开关应用。该器件适用于 UPS 和焊接机等快速开关应用。
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Reference Price
HGTP3N60A4
Pb
A
H
P
TO-220-3
NA
0
TUBE
800
N
-
600
8
2
-
0.025
0.037
-
-
21
-
12
70
No
Price N/A
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可靠性数据
Die Related Summary Data
Device: HGTP3N60A4
Equivalent to wafer fab process: IGBT
产品技术
产品技术
等效器件小时
平均故障间隔时间/平均无故障时间(按小时计算)
FITS
IGBT
1
2930462991
More Details
Re-calculate Data
Data is based on the following assumptions.
Note: The temperature and confidence level may be adjusted to your requirements.
Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)