IGBTs | HGTP3N60A4

IGBT，600 V，SMPS

Obsolete

数据表

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概览

HGTP3N60A4 结合了 MOSFET 的高输入阻抗，以及双极晶体管的低导通状态损耗最佳特性。此 IGBT 适用于务必保证低导通损耗的、在高频率下运行的多种高电压开关应用。该器件适用于 UPS 和焊接机等快速开关应用。

  • 其他工业
  • 不间断电源

  • 8A, 600V @ TC = 110°C
  • 低饱和电压： V CE(sat) = 2.0 V @ I C = 3A
  • 典型下降时间。 . . . . . . . . . TJ=125°C 时，为 70 ns
  • 低导通损耗

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Family

V(BR)CES Typ (V)

IC Max (A)

VCE(sat) Typ (V)

VF Typ (V)

Eoff Typ (mJ)

Eon Typ (mJ)

Trr Typ (ns)

Irr Typ (A)

Gate Charge Typ (nC)

Short Circuit Withstand (µs)

EAS Typ (mJ)

PD Max (W)

Co-Packaged Diode

Reference Price

HGTP3N60A4

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Obsolete

CAD Model

Pb

A

H

P

TO-220-3

340AT

NA

0

TUBE

800

N

-

600

8

2

-

0.025

0.037

-

-

21

-

12

70

No

Price N/A

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可靠性数据

Die Related Summary Data

Device: HGTP3N60A4

Equivalent to wafer fab process: IGBT

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等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

IGBT

1

2930462991

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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