IGBT,600 V,SMPS

Obsolete

概览

HGTP3N60A4 结合了 MOSFET 的高输入阻抗,以及双极晶体管的低导通状态损耗最佳特性。此 IGBT 适用于务必保证低导通损耗的、在高频率下运行的多种高电压开关应用。该器件适用于 UPS 和焊接机等快速开关应用。

  • 其他工业
  • 不间断电源

  • 8A, 600V @ TC = 110°C
  • 低饱和电压: V CE(sat) = 2.0 V @ I C = 3A
  • 典型下降时间。 . . . . . . . . . TJ=125°C 时,为 70 ns
  • 低导通损耗

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产品

状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Family

V(BR)CES Typ (V)

IC Max (A)

VCE(sat) Typ (V)

VF Typ (V)

Eoff Typ (mJ)

Eon Typ (mJ)

Trr Typ (ns)

Irr Typ (A)

Gate Charge Typ (nC)

Short Circuit Withstand (µs)

EAS Typ (mJ)

PD Max (W)

Co-Packaged Diode

Reference Price

HGTP3N60A4

CAD Model

Pb

A

H

P

TO-220-3

NA

0

TUBE

800

N

-

600

8

2

-

0.025

0.037

-

-

21

-

12

70

No

Price N/A

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