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This Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, and providessuperior performance in demanding switching applications, offeringboth low on−state voltage and minimal switching loss. The IGBT iswell suited for resonant or soft switching applications.
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Reference Price
NGTB15N120IHWG
Pb
A
H
P
TO-247-3
NA
0
TUBE
30
N
-
1200
15
2.1
2
0.36
-
-
-
120
-
-
278
Yes
Price N/A
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