IGBT, 15 A, 1200V in TO247

Obsolete

概览

This Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, and providessuperior performance in demanding switching applications, offeringboth low on−state voltage and minimal switching loss. The IGBT iswell suited for resonant or soft switching applications.

  • Inductive Heating
  • Consumer Appliances
  • Soft Switching

  • Extremely Efficient Trench with Fieldstop Technology
  • Low Switching Loss Reduces System Power Dissipation
  • Optimized for Low Losses in IH Cooker Application
  • This is a Pb−Free Device

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Family

V(BR)CES Typ (V)

IC Max (A)

VCE(sat) Typ (V)

VF Typ (V)

Eoff Typ (mJ)

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Irr Typ (A)

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Co-Packaged Diode

Reference Price

NGTB15N120IHWG

CAD Model

Pb

A

H

P

TO-247-3

NA

0

TUBE

30

N

-

1200

15

2.1

2

0.36

-

-

-

120

-

-

278

Yes

Price N/A

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