IGBT 1200V 20A FS1 Gen Mkt
Obsolete
This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on-state voltage and minimal switching loss. The IGBT is well suited for resonant or soft switching applications. Incorporated into the device is a rugged co-packaged free wheeling diode with a low forward voltage.
搜寻
Close Search
产品:
1
分享
排序方式
产品系列:
┗
可订购器件:
1
产品
状态
CAD Models
Compliance
Package Type
Case Outline
MSL Type
MSL Temp (°C)
Container Type
Container Qty.
ON Target
Family
V(BR)CES Typ (V)
IC Max (A)
VCE(sat) Typ (V)
VF Typ (V)
Eoff Typ (mJ)
Eon Typ (mJ)
Trr Typ (ns)
Irr Typ (A)
Gate Charge Typ (nC)
Short Circuit Withstand (µs)
EAS Typ (mJ)
PD Max (W)
Co-Packaged Diode
Reference Price
Obsolete
Pb
A
H
P
TO-247-3
NA
0
TUBE
30
N
-
1200
20
1.8
1.55
0.7
3.1
-
-
200
5
-
192
Yes
Price N/A
More Details
Show More
1-25 of 25
Products per page
Jump to :
Find and compare products, get support and connect with onsemi sales team.
Contact Sales
分享
导出
Rows
Printer Friendly Version
PDF Format
Excel Format
CSV Format
To proceed order you need to accept Terms