IGBTs | NGTB20N120L

IGBT 1200V 20A FS1 Gen Mkt

Obsolete

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概览

This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on-state voltage and minimal switching loss. The IGBT is well suited for resonant or soft switching applications. Incorporated into the device is a rugged co-packaged free wheeling diode with a low forward voltage.

  • Industrial Switching

  • Inverter Welding Machiines
  • Microwave Ovens

  • Low Saturation Voltage using Trench with Fieldstop Technology
  • Low Switching Loss

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V(BR)CES Typ (V)

IC Max (A)

VCE(sat) Typ (V)

VF Typ (V)

Eoff Typ (mJ)

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Irr Typ (A)

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Co-Packaged Diode

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NGTB20N120LWG

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Obsolete

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CAD Model

Pb

A

H

P

TO-247-3

340L-02

NA

0

TUBE

30

N

-

1200

20

1.8

1.55

0.7

3.1

-

-

200

5

-

192

Yes

Price N/A

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