IGBT, 600 V, 30 A, FS1 Solar/UPS

已停产

概览

This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss.

  • Solar Inverters
  • Uninterruptible Power Supplies(UPS)
  • Low Saturation Voltage using Trench with Field Stop Technology
  • Low Switching Loss Reduces System Power Dissipation
  • Soft Fast Reverse Recovery Diode
  • Optimized for High Speed Switching
  • 5µs Short Circuit Capability

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CAD Models

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Family

V(BR)CES Typ (V)

IC Max (A)

VCE(sat) Typ (V)

VF Typ (V)

Eoff Typ (mJ)

Eon Typ (mJ)

Trr Typ (ns)

Irr Typ (A)

Gate Charge Typ (nC)

Short Circuit Withstand (µs)

EAS Typ (mJ)

PD Max (W)

Co-Packaged Diode

参考价格

NGTB30N60FLWG

已停产

CAD Model

Pb

A

H

P

TO-247-3

NA

0

TUBE

30

No

-

600

30

1.65

1.9

0.28

0.7

72

6

170

5

-

167

Yes

Price N/A

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