IGBTs | NGTB30N60FWG

IGBT 600V 30A Gen Mkt

Obsolete

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概览

This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss.

  • Solar Inverters
  • Motor Drives
  • Uninterruptible Power Supplies (UPS)

  • Optimized for Very Low VCEsat
  • Low Switching Loss
  • Soft Fast Reverse Recovery Diode
  • 5µs Short Circuit Capability

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MSL Temp (°C)

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V(BR)CES Typ (V)

IC Max (A)

VCE(sat) Typ (V)

VF Typ (V)

Eoff Typ (mJ)

Eon Typ (mJ)

Trr Typ (ns)

Irr Typ (A)

Gate Charge Typ (nC)

Short Circuit Withstand (µs)

EAS Typ (mJ)

PD Max (W)

Co-Packaged Diode

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NGTB30N60FWG

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Obsolete

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CAD Model

Pb

A

H

P

TO-247-3

340L-02

NA

0

TUBE

30

N

-

600

30

1.45

1.9

0.65

0.65

72

6

170

5

-

167

Yes

Price N/A

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