IGBTs | NGTB30N60S

IGBT 600V 30A Welding

已停产

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概览

This Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, and providessuperior performance in demanding switching applications, offeringboth low on state voltage and minimal switching loss. The IGBT iswell suited for half bridge resonant applications. Incorporated into thedevice is a soft and fast co−packaged free wheeling diode with a lowforward voltage.

  • Inverter
  • Welding Machine
  • Low Saturation Voltage using Trench with Fieldstop Technology
  • Low Switching Loss Reduces System Power Dissipation
  • Low Gate Charge
  • Soft, Fast Free Wheeling Diode
  • These are Pb−Free Devices

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

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ON Target

Family

V(BR)CES Typ (V)

IC Max (A)

VCE(sat) Typ (V)

VF Typ (V)

Eoff Typ (mJ)

Eon Typ (mJ)

Trr Typ (ns)

Irr Typ (A)

Gate Charge Typ (nC)

Short Circuit Withstand (µs)

EAS Typ (mJ)

PD Max (W)

Co-Packaged Diode

参考价格

NGTB30N60SWG

联系销售

已停产

CAD Model

Pb

A

H

P

TO-247-3

340L-02

NA

0

TUBE

30

No

-

600

30

1.9

2.3

0.54

0.75

200

9

90

-

-

189

Yes

Price N/A

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