This Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop II Trench construction, and provides superiorperformance in demanding switching applications, offering both lowon state voltage and minimal switching loss. The IGBT is well suitedfor UPS and solar applications. Incorporated into the device is a softand fast co−packaged free wheeling diode with a low forward voltage.
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Co-Packaged Diode
参考价格
已停产
Pb
A
H
P
TO-247-3
NA
0
TUBE
30
No
-
600
80
1.7
2.2
0.44
0.97
72
6.7
170
5
-
366
Yes
Price N/A
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