IGBTs | NGTB40N65IHR

IGBT, Monolithic with Reverse Conducting Diode, 650 V, 40 A

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概览

This Insulated Gate Bipolar Transistor (IGBT) features robust and cost effective Field Stop (FS2) trench construction with a monolithic RC Diode. It provides a cost effective Solution for applications where diode losses are minimal. The IGBT is optimized for low conduction losses (low VCEsat) and is well suited for resonant or soft switching applications.

  • Inductive Heating
  • Air Conditioning PFC
  • Welding
  • Industrial
  • Extremely Efficient Trench with Fieldstop Technology
  • Low Conduction Loss Design for Soft Switching Application
  • Reduced Power Dissipation in Induction Heating
  • Reliable and Cost Effective Single Die Solution
  • This is a Pb-Free Device

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V(BR)CES Typ (V)

IC Max (A)

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Irr Typ (A)

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Co-Packaged Diode

参考价格

NGTB40N65IHRWG

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已停产

CAD Model

Pb

A

H

P

TO-247-3

340AL

NA

0

TUBE

30

No

-

650

40

1.55

1.5

0.42

-

-

-

190

-

-

405

No

Price N/A

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可靠性数据

Die Related Summary Data

Device: NGTB40N65IHRWG

Equivalent to wafer fab process: IGN IGBT

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等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

IGN IGBT

12

30217118471

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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