IGBTs | PCGA200T65NF8

IGBT，650 V，200 A 场截止沟槽

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概览

This 650V Field Stop Trench Gen3 (FS3) IGBT bare die has a die size of 10mm x 10mm. It can be used in power module with Al wirebonding

  • Traction Module
  • General Purpose Power Module

  • EV/HEV

  • 符合 AEC-Q101 标准
  • 最高结温 175°C
  • 正温度系数
  • 易于并联
  • 短路额定电流
  • 非常低的饱和电压： VCE(SAT) = 1.53 V （典型值） @ IC = 200A
  • 针对电机控制应用进行优化

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V(BR)CES Typ (V)

IC Max (A)

VCE(sat) Typ (V)

VF Typ (V)

Eoff Typ (mJ)

Eon Typ (mJ)

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Irr Typ (A)

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PCGA200T65NF8

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Pb

A

H

P

-

-

NA

0

MTFRM

1

N

-

650

200

1.53

-

-

-

-

-

229

5

-

-

No

$10.6837

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可靠性数据

Die Related Summary Data

Device: PCGA200T65NF8

Equivalent to wafer fab process: IGBT

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等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

IGBT

1

2930462991

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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