IGBTs | PCGA200T65NF8

IGBT，650 V，200 A 场截止沟槽

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概览

This 650V Field Stop Trench Gen3 (FS3) IGBT bare die has a die size of 10mm x 10mm. It can be used in power module with Al wirebonding

  • Traction Module
  • General Purpose Power Module
  • EV/HEV
  • 符合 AEC-Q101 标准
  • 最高结温 175°C
  • 正温度系数
  • 易于并联
  • 短路额定电流
  • 非常低的饱和电压： VCE(SAT) = 1.53 V （典型值） @ IC = 200A
  • 针对电机控制应用进行优化

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Family

V(BR)CES Typ (V)

IC Max (A)

VCE(sat) Typ (V)

VF Typ (V)

Eoff Typ (mJ)

Eon Typ (mJ)

Trr Typ (ns)

Irr Typ (A)

Gate Charge Typ (nC)

Short Circuit Withstand (µs)

EAS Typ (mJ)

PD Max (W)

Co-Packaged Diode

Reference Price

PCGA200T65NF8

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Active

CAD Model

Pb

A

H

P

-

-

NA

0

MTFRM

1

N

-

650

200

1.53

-

-

-

-

-

229

5

-

-

No

$10.6837

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