Small Signal MOSFETs | FDN352AP

单 P 沟道，PowerTrench® MOSFET，-30V，-1.3A，180mΩ

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概览

此 P 沟道逻辑电平 MOSFET 是使用先进的 PowerTrench 工艺生产的，特别适用于最大程度降低导通电阻，同时保持低门极电荷，实现卓越的开关性能。此类器件特别适用于需要在非常小形的表面贴装封装中实现线路内低功率损耗的低压和电池供电应用。

  • This product is general usage and suitable for many different applications.
  • Notebook computer power management

  • -1.3A，-30V
  • RDS(ON) = 180 mΩ @ VGS = -10V
  • -1.1A，-30V
  • RDS(ON) = 300 mΩ @ VGS = -4.5V
  • 高性能沟道技术可实现极低的RDS(ON)
  • 高功率版本的工业标准SOT-23封装。 相同的SOT-23引脚，可将功率处理能力提高30%。

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状态

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Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

Id Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDN352AP

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CAD Model

Pb

A

H

P

SOT-23-3

527AG

1

260

REEL

3000

N

P-Channel

PowerTrench® T1

SOT-23

Small Signal

Logic

0

Single

0

-30

180

25

-2.5

-1.3

0.5

-

300

-

1.4

150

-

-

-

-

$0.1323

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可靠性数据

Die Related Summary Data

Device: FDN352AP

Equivalent to wafer fab process: TT

产品技术

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等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

TT

6

2104831460

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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