Small Signal MOSFETs | FDS3890

80V N 沟道双 PowerTrench® MOSFET 4.7A，44mΩ

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概览

此 N 沟道 MOSFET 专为提高 DC/DC 转换器的总体效能而设计，可以使用同步开关 PWM 控制器，也可以使用传统开关 PWM 控制器。与具有相当的 RDS(ON) 规格的其他 MOSFET 相比，此类 MOSFET 开关速度更快，门极电荷更低。因此，该 MOSFET 驱动简单，也更安全（即使在非常高的频率下亦是如此），DC/DC 电源设计具有更高的总体效能。

  • This product is general usage and suitable for many different applications.

  • 4.7 A, 80 V
  • RDS(on) = 44 mΩ@ VGS = 10 V
  • RDS(on) = 50 mΩ @ VGS = 6 V
  • 快速开关速度
  • 高性能沟道技术可实现极低的RDS(ON)
  • 高功率和高电流处理能力

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

Id Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDS3890

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CAD Model

Pb

A

H

P

SOIC-8

751EB

1

260

REEL

2500

Y

N-Channel

PowerTrench® T1

SOIC-8

Small Signal

Standard

0

Dual

0

80

Q1: 44.0, Q2: 44.0

±20

4

4.7

2

-

-

-

25

1180

5.8

-

171

50

$0.7904

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可靠性数据

Die Related Summary Data

Device: FDS3890

Equivalent to wafer fab process: TR

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等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

TR

1

1603286882

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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