小信号MOSFET | FDS4897C

双 N 和 P 沟道，PowerTrench® MOSFET，40V

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数据表

购买

概览

此类双 N 和 P 沟道增强型电场效应晶体管是使用先进的 PowerTrench® 工艺生产的，特别适用于最大程度降低导通电阻，同时保持卓越的开关性能。

  • This product is general usage and suitable for many different applications.
  • Inverter
  • Power Supplies
  • Q1： N沟道6.2A，40V
  • RDS(ON) = 29 mΩ @ VGS = 10V
  • 采用广泛使用的表面贴装封装，具有高功率和高电流处理能力
  • 符合RoHS标准

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与FDS4897C相关的产品服务、工具和其他资源

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可靠性数据

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

Id Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

参考价格

FDS4897C

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Last Shipments

CAD Model

Pb

A

H

P

SOIC-8

751EB

1

260

REEL

2500

No

Complementary

PowerTrench® T1

SOIC-8

Small Signal

Logic

0

Dual

0

±40

N:29.0,P:46.0

±20

±3

N: 6.2, P: -4.4

2

-

N:36.0,P:63.0

16

6

N: 760, P: 1050

N: 2.8, P: 4

N: 7, P: 10

N: 100, P: 140

N: 60, P: 70

Price N/A

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可靠性数据

Die Related Summary Data

Device: FDS4897C

Equivalent to wafer fab process: T5,TT

产品技术

产品技术

等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

T5,TT

0

140632620

More Details

Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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