功率 MOSFET,N 沟道,QFET®, 200 V,32 A,82 mΩ,TO-3P

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概览

此 N 沟道增强型功率 MOSFET 是使用平面条纹和 DMOS 专属工艺生产的。此先进 MOSFET 技术适用于降低导通电阻,提供卓越的开关性能以及高雪崩能量强度。此类器件适用于开关模式电源、有源功率因数校正 (PFC) 和电子灯镇流器。

  • 其他音频与视频
  • Switched Mode Power Supplies
  • Active Power Factor Correction (PFC)
  • Electronic Lamp Ballasts

  • 32A, 200V, RDS(on) = 82mΩ(最大值)@VGS = 10 V, ID = 16A栅极电荷低(典型值:82.5nC)
  • 低 Crss(典型值185pF)
  • 100% 经过雪崩击穿测试
  • 100% avalanche tested

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

Id Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FQA32N20C

Last Shipments

CAD Model

Pb

A

H

P

TO-3P-3L

NA

0

TUBE

450

N

N-Channel

PowerTrench® T1

TO-3P-3

Small Signal

Standard

0

Single

0

200

82

±30

4

32

204

-

-

-

82.5

1700

44.5

2730

400

185

Price N/A

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