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Small Signal MOSFETs | NDS356AP
概览
SuperSOT™-3 P 沟道逻辑电平增强型电场效应晶体管是使用安森美半导体的高单元密度 DMOS 专属技术生产的。这种极高密度工艺特别适用于最大程度降低导通电阻。这些器件特别适用于笔记本电脑电源管理、便携式电子设备和其他电池供电电路等低压应用，在此类应用中需要在非常小形的表面贴装封装中实现快速高压侧开关和线路内低功率损耗。
- This product is general usage and suitable for many different applications
- -1.1 A, -30 V
rDS(ON) = 0.3 Ω @ VGS = -4.5 V
rDS(ON) = 0.2 Ω @ VGS = -10 V - Industry Standard Outline SOT-23 Surface Mount Package Using Proprietary SuperSOT™-3 Design for Superior Thermal and Electrical Capabilities.
- High Density Cell Design for Extremely Low rDS(ON)
- Exceptional On-Resistance and Maximum DC Current Capability
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NDS356AP
Pb
A
H
P
SOT-23-3
1
260
REEL
3000
N
P-Channel
PowerTrench® T1
SOT-23-3
Small Signal
Logic
0
NA
0
-30
200
20
-3
-1.1
0.5
-
300
-
3.4
280
-
-
-
-
Price N/A
More Details
NDS356AP-NB8L005A
Pb
A
H
P
SOT-23-3
1
260
REEL
3000
N
P-Channel
PowerTrench® T1
NA
Small Signal
Logic
0
NA
0
-30
200
20
-3
-1.1
0.5
-
300
-
3.4
280
-
-
-
-
Price N/A
More Details
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