Small Signal MOSFETs | NVC6S5A354PLZ

P 沟道，功率 MOSFET，-60V，-4A，100mΩ

Obsolete

数据表

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概览

此功率 MOSFET 是使用安森美半导体 的沟槽技术生产的，专门用于最大程度减小门极电荷，降低导通电阻。此器件适用于具有低门极电荷驱动或低导通电阻要求的应用。

  • Reverse Battery Protection
  • High Side Load Switch

  • Head Light Unit
  • DC-DC Module

  • Low On-Resistance
  • High ESD protection HBM:H1C, CDM:C5
  • RoHS compliance
  • 4V drive

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状态

CAD Models

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

Id Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

NVC6S5A354PLZT1G

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Obsolete

CAD Model

Pb

A

H

P

CPH-6

318BD

1

260

REEL

3000

N

P-Channel

PowerTrench® T1

CPH-6

Small Signal

Logic

0

NA

0

-60

100

20

-2.6

-4

1.9

-

135

-

14

600

-

-

60

50

Price N/A

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可靠性数据

Die Related Summary Data

Device: NVC6S5A354PLZT1G

Equivalent to wafer fab process: TRENCH SUB

产品技术

产品技术

等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

TRENCH SUB

0

37119990684

More Details

Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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