方案
设计
Silicon Carbide (SiC) Modules | NVXK2TR80WDT
概览
EliteSiC MOSFET Power Module 1200 V, 80 mOhm in Dual H -Bridge configuration, Al²O³ DBC substrate.
应用
- On board charger and HV DC-DC in EV−PHEV
终端产品
- 11 -22kW On board charger for EV−PHEV
特性
- DIP Silicon Carbide Dual H-Bridge power module for on board charger (OBC) for xEV applications
- Creepage and clearance per IEC60664-1, IEC 60950-1
- Compact design
- Module serialization for full traceability
- Lead free, ROHS and UL94V-0 compliant
- Automotive qualified per AEC-Q101 and AQG324
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NVXK2TR80WDT
Active
Pb
A
H
P
APM32 AUTOMOTIVE MODULE
1
260
TUBE
60
N
Half-Bridge
1200
80
Automotive OBC
Price N/A
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