Silicon Carbide (SiC) Modules | NXH011F120M3F2PTHG

Silicon Carbide (SiC) Module – EliteSiC, 11 mohm SiC M3S MOSFET, 1200 V, 4-PACK Full Bridge Topology, F2 Package

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The NXH011F120M3F2PTHG is a power module containing 11 mohm / 1200 V SiC MOSFET Full−bridge and a thermistor with HPS DBC in an F2 package. The SiC MOSFET switches use M3S technology and are driven with 18V-20V gate drive.

  • DC-AC conversion
  • DC-DC conversion
  • AC-DC conversion

  • UPS
  • Energy Storage Systems
  • Electric Vehicle Charging Stations
  • Solar Inverters

  • Excellent FOM [ = Rdson * Eoss ]
  • 15V to 18V Gate Drive
  • 11 mohm / 1200 V M3S SiC MOSFET Full−Bridge

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NXH011F120M3F2PTHG

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A

H

P

PIM34 56.70x42.50x12.00

180HU

NA

0

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20

F

Bridge

1200

11

EV Charging, Energy Infrastructure

$117.5971

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