Silicon Carbide (SiC) Modules | NXH40B120MNQ0

Full SiC MOSFET Module | EliteSiC Two Channel Full SiC Boost, 1200 V, 40 mohm SiC MOSFET + 1200 V, 40 A SiC Diode

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The NXH40B120MNQ0 is a EliteSiC power integrated module (PIM) containing a dual full SiC boost stage consisting of two 40mohm/1200V SiC MOSFETs and two 40A/1200V SiC diodes. Two additional 50A/1200V bypass rectifiers used for inrush current limit are included. An on-board thermistor is included.

  • Solar Inverter Boost Stage
  • Solar Inverter
  • UPS
  • Energy Storage Systems
  • Electric Vehicle Charging Stations
  • SiC MOSFET Specification: 40 mΩ 1200 V
  • 50 A / 1200 V Bypass Diodes
  • SiC Rectifier Specification: VF = 1.4 V
  • Solderable Pins
  • Thermistor

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NXH40B120MNQ0SNG

Active

CAD Model

Pb

A

H

P

Q0

180AJ

NA

0

BTRAY

24

N

Two Channel Boost

1200

40

Solar Inverter, Energy Infrastructure

$83.5635

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