NIMD6001

MOSFET 驱动器 60 V，3.3 A 130 mΩ 双 N 沟道，带诊断输出

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CAD模型

概览

NIMD6001N 是一款双 3 A 低压侧开关，带集成式共禁用输入和漏极诊断输出。将禁用引脚拉至低电平将超越应用的任何门极电压，并关断两个 FET 开关。如果漏极-源极电压超过大约 50V，则逻辑 1 在诊断/反馈引脚上有效。内部隔离二极管允许多个器件的禁用和诊断/反馈引脚在有线 OR 配置中进行互联，而无需额外部件。

应用

Injector Driver

终端产品

Automobiles

特性

110m Maximum RDSON at VGS=10V
Avalanche Energy Specified
Gate Drive Disable Input
Drain-Source Voltage Diagnostic Feedback Output
Electrically Isolated Drains
Internal Resistors Limit Peak Transient Gate Current
AEC-Q101 Qualified

物质成分

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

Channel Polarity

V_(BR)DSS Min (V)

I_D Typ (A)

r_DS(on) Max (mΩ)

P_D Max (W)

Reference Price

NIMD6001NR2G

Consult Sales Office

SOIC-8

751-07

260

REEL

2500

N-Channel

130

Price N/A

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Protected MOSFETs | NIMD6001

MOSFET 驱动器 60 V，3.3 A 130 mΩ 双 N 沟道，带诊断输出

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