Schottky Diodes & Schottky Rectifiers | NRVBAF260
概览
This device employs the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes in surface mount applications where compact size and weight are critical to the system.
- Power Conversion Circuit
- Reverse Battery Protection
- Gate Driving Circuit
- Protection and Free-Wheeling
- General Converters
- Lighting
- Gasoline Direct Injection
- Low Profile Package for Space Constrained Applications
- Rectangular Package for Automated Handling
- Highly Stable Oxide Passivated Junction
- 150°C Operating Junction Temperature
- Guard-Ring for Stress Protection
- These are Pb-Free and Halide-Free Devices
Mechanical Characteristics: - Case: Epoxy, Molded, Epoxy Meets UL 94, V-0
- Weight: 95 mg (approximately)
- Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable - Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds - Cathode Polarity Band
- Device Meets MSL 1 Requirements
- ESD Ratings: Machine Model = C
Human Body Model = 3B
产品参数及购买信息
支持服务
联系安森美销售团队获得支持，查询或者对比产品细节。
联系销售
