FOD8334 是一款 4.0 A 输出电流 IGBT 驱动光耦合器,能够驱动额定值最高为 1,200 V 和 150 A 的中等功率 IGBT。它适用于电机控制逆变器应用和高性能电源系统中使用的功率 IGBT 和 MOSFET 的快速开关驱动。FOD8334 提供了一些必需的保护特性,防止发生导致 IGBT 破坏性热崩溃的故障情况。 该器件利用安森美半导体的专属共面封装技术 Optoplanar® 和优化的集成电路设计来实现可靠的高隔离和高抗扰度,具有高共模抑制和电源抑制规定特性。该器件采用宽体,16 引脚,小外形塑料封装。 该门极驱动沟道包含一个与高速驱动集成电路进行光耦合的镓铝砷 (AlGaAs) 发光二极管 (LED),该集成电路带有低 RDS(ON) MOSFET 输出级。故障感应沟道包括一个与集成的高速反馈电路进行光耦合的 AlGaAs 发光二极管 (LED),用于进行故障感应。
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FOD8334
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FOD8334R2
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Die Related Summary Data
Device: FOD8334R2
Equivalent to wafer fab process: BB,BM,GA
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等效器件小时
平均故障间隔时间/平均无故障时间(按小时计算)
FITS
BB,BM,GA
0
105155986
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Data is based on the following assumptions.
Note: The temperature and confidence level may be adjusted to your requirements.
Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)