输入 LED 驱动,4.0 A 输出电流,IGBT 驱动光耦合器带不饱和检测,隔离故障感应和有源米勒箝位

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FOD8334 是一款 4.0 A 输出电流 IGBT 驱动光耦合器,能够驱动额定值最高为 1,200 V 和 150 A 的中等功率 IGBT。它适用于电机控制逆变器应用和高性能电源系统中使用的功率 IGBT 和 MOSFET 的快速开关驱动。FOD8334 提供了一些必需的保护特性,防止发生导致 IGBT 破坏性热崩溃的故障情况。 该器件利用安森美半导体的专属共面封装技术 Optoplanar® 和优化的集成电路设计来实现可靠的高隔离和高抗扰度,具有高共模抑制和电源抑制规定特性。该器件采用宽体,16 引脚,小外形塑料封装。 该门极驱动沟道包含一个与高速驱动集成电路进行光耦合的镓铝砷 (AlGaAs) 发光二极管 (LED),该集成电路带有低 RDS(ON) MOSFET 输出级。故障感应沟道包括一个与集成的高速反馈电路进行光耦合的 AlGaAs 发光二极管 (LED),用于进行故障感应。

  • 自动化
  • 消费型设备
  • 发电和配电
  • 工业级电机
  • 运动控制-工业电机
  • 不间断电源
  • Industrial HVAC
  • AC Servo Motor System
  • Solar
  • Input LED Drive Facilitates Receiving Digitally Encoded Signals from PWM Output
  • Optically Isolated Fault-Sensing Feedback
  • Active Miller Clamp to Shut Off IGBT During High dv/dt without Negative Supply Voltage
  • High Noise Immunity Characterized by Common Mode Rejection – 35 kV/μs Minimum, VCM = 1500 VPEAK
  • 4.0 A Maximum Peak Output Current Driving Capability for Medium Power IGBT
    – P-Channel MOSFETs at Output Stage Enable Output Voltage Swing Close to Supply Rail (Rail-to-Rail Output)
    – Wide Supply Voltage Range: 15 V to 30 V
  • Integrated IGBT Protection– Desaturation Detection– “Soft” IGBT Turn-Off– Under-Voltage Lockout (UVLO) with Hysteresis
  • Fast Switching Speed Over Full Operating Temperature Range– 250 ns Maximum Propagation Delay– 100 ns Maximum Pulse Width Distortion
  • Extended Industrial Temperature Range:– –40°C to 100°C
  • Safety and Regulatory Approvals
    – UL1577, 4,243 VRMS for 1 Minute
    – DIN-EN/IEC60747-5-5 (Pending Approvals):
    1,414 VPEAK Working Insulation Voltage Rating
    8,000 VPEAK Transient Isolation Voltage Rating
    8 mm Creepage and Clearance Distance

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FOD8334

Active

Pb

A

H

P

SOIC16 W

1

260

TUBE

1000

Y

7

5

3

250

100

11.7

10.7

35

4243

-40

100

$3.7247

More Details

FOD8334R2

Active

Pb

A

H

P

SOIC16 W

1

260

REEL

750

Y

7

5

3

250

100

11.7

10.7

35

4243

-40

100

$3.7605

More Details

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