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IGBT/MOSFET Gate Drivers Optocouplers | FOD8334
概览
FOD8334 是一款 4.0 A 输出电流 IGBT 驱动光耦合器，能够驱动额定值最高为 1,200 V 和 150 A 的中等功率 IGBT。它适用于电机控制逆变器应用和高性能电源系统中使用的功率 IGBT 和 MOSFET 的快速开关驱动。FOD8334 提供了一些必需的保护特性，防止发生导致 IGBT 破坏性热崩溃的故障情况。 该器件利用安森美半导体的专属共面封装技术 Optoplanar® 和优化的集成电路设计来实现可靠的高隔离和高抗扰度，具有高共模抑制和电源抑制规定特性。该器件采用宽体，16 引脚，小外形塑料封装。 该门极驱动沟道包含一个与高速驱动集成电路进行光耦合的镓铝砷 (AlGaAs) 发光二极管 (LED)，该集成电路带有低 RDS(ON) MOSFET 输出级。故障感应沟道包括一个与集成的高速反馈电路进行光耦合的 AlGaAs 发光二极管 (LED)，用于进行故障感应。
- 自动化
- 消费型设备
- 发电和配电
- 工业级电机
- 运动控制-工业电机
- 不间断电源
- Industrial HVAC
- AC Servo Motor System
- Solar
- Input LED Drive Facilitates Receiving Digitally Encoded Signals from PWM Output
- Optically Isolated Fault-Sensing Feedback
- Active Miller Clamp to Shut Off IGBT During High dv/dt without Negative Supply Voltage
- High Noise Immunity Characterized by Common Mode Rejection – 35 kV/μs Minimum, VCM = 1500 VPEAK
- 4.0 A Maximum Peak Output Current Driving Capability for Medium Power IGBT
– P-Channel MOSFETs at Output Stage Enable Output Voltage Swing Close to Supply Rail (Rail-to-Rail Output)
– Wide Supply Voltage Range: 15 V to 30 V - Integrated IGBT Protection– Desaturation Detection– “Soft” IGBT Turn-Off– Under-Voltage Lockout (UVLO) with Hysteresis
- Fast Switching Speed Over Full Operating Temperature Range– 250 ns Maximum Propagation Delay– 100 ns Maximum Pulse Width Distortion
- Extended Industrial Temperature Range:– –40°C to 100°C
- Safety and Regulatory Approvals
– UL1577, 4,243 VRMS for 1 Minute
– DIN-EN/IEC60747-5-5 (Pending Approvals):
1,414 VPEAK Working Insulation Voltage Rating
8,000 VPEAK Transient Isolation Voltage Rating
8 mm Creepage and Clearance Distance
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