NCP5183 是一款高电压高电流 功率 MOSFET 驱动器, 提供两个输出,用于驱动 2 个组织为半桥(或任何其他高压侧 + 低压侧)配置的 N 沟道功率 MOSFET。 它使用自举技术来确保高压侧电源开关的恰当驱动。 该驱动器使用 2 个独立输入可适应任何拓扑结构(包括半桥、不对称半桥、有源箝位和全桥)。
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可靠性数据
Die Related Summary Data
Device: NCP5183DR2G
Equivalent to wafer fab process: VHVIC
产品技术
产品技术
等效器件小时
平均故障间隔时间/平均无故障时间(按小时计算)
FITS
VHVIC
2
3478314626
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Re-calculate Data
Data is based on the following assumptions.
Note: The temperature and confidence level may be adjusted to your requirements.
Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)