The energy infrastructure market which consists of applications such as Solar Inverters, Energy Storage Systems, EV Charging Stations, and Uninterruptable power supplies is undergoing a transition to Silicon Carbide (SiC) power semiconductors from traditional silicon (Si) power semiconductors. The advantages of SiC FETs compared to IGBTs in these applications will be explored in addition to the trends in these markets that are accelerating this transition. As these are high power applications a comparison between discrete and module solutions will also be analyzed. Lastly, whether a discrete or module is used gate drivers will be needed and thus the selection criteria of SiC gate drivers will be addressed.
Presenter: Steven Shackell
Global Industrial Business Development Manager, ON Semiconductor
Steven Shackell is a Business Development Manager in ON Semiconductor’s Power Solutions Group responsible for the Industrial Market. He has spent all 9 years of his semiconductor industry experience including roles in product engineering, applications, and marketing in ON Semiconductor’s Power Solution Group. He received his BSEE in electrical engineering from Arizona State University in 2012. His main interests are in power semiconductors for renewable energy, EV charging stations, and industrial motors.
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