Gallium Nitride (GaN) Integrated Power | NCP58934ABL

Enhancement Mode Gallium Nitride (GaN) Power Switch with Integrated Gate Clamp and Protection - GaNEXUS Smart, 650V, 27 mOhm

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Integrates a 650V enhancement-mode GaN power transistor with gate-drive and protection functions in a single package. An internal gate clamp, supported by LDO-based circuitry, regulates the gate drive voltage over a 10 - 24V input range to protect the GaN transistor from excessive gate stress while maintaining excellent switching performance. Intended for compact, high-frequency, and high-power conversion applications.

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  • Ultra-low Circuit and Package Parasitic Elements
  • Integrated Gate Clamp

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ENGNCP58934ABLTXG

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量产中

CAD Model

Pb

A

H

P

PDSO-F9 10.38x9.90x2.30, 1.20P

207AA

3

260

REEL

1200

No

650

27

35

132

63

127

Gate Voltage Clamp Protection

Integrated Miller Clamp

$8.1998

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