Silicon Carbide (SiC) Diodes | FFSB0865B

Silicon Carbide (SiC) Schottky Diode – EliteSiC, 8 A, 650 V, D2, D2PAK-2L

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Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost.

  • Telecommunication
  • Cloud system
  • Industrial

  • Telecom power
  • Server power
  • UPS / ESS
  • Solar
  • EV Charger

  • Max Junction Temperature 175 °C
  • Avalanche Rated 33 mJ
  • High Surge Current Capacity
  • Positive Temperature Coefficient
  • No Reverse Recovery / No Forward Recovery
  • Low Vf @ TJ:175 °C

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VRRM (V)

IF(ave) (A)

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FFSB0865B

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Pb

A

H

P

D2PAK2 (TO-263-2L)

418BK

1

260

REEL

800

Y

D2

Single

650

8

1.7

56

40

$0.9479

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可靠性数据

Die Related Summary Data

Device: FFSB0865B

Equivalent to wafer fab process: SIC

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等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

SIC

0

3855921070

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Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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