Silicon Carbide (SiC) Schottky Diode – EliteSiC, 10 A, 1200 V, D1, D2PAK-2L

概览

Silicon Carbide (SiC) Schottky Diodes use a completely newtechnology that provides superior switching performance and higherreliability compared to Silicon. No reverse recovery current,temperature independent switching characteristics, and excellentthermal performance sets Silicon Carbide as the next generation ofpower semiconductor. System benefits include highest efficiency,faster operating frequency, increased power density, reduced EMI, andreduced system size and cost.

  • Industrial

  • UPS / ESS
  • Solar
  • EV Charger

  • Max Junction Temperature 175°C
  • Avalanche Rated 100 mJ
  • High Surge Current Capacity
  • Positive Temperature Coefficient
  • No Reverse Recovery / No Forward Recovery

Tools and Resources

Product services, tools and other useful resources related to FFSB10120A

Buy/Parametrics Table

搜寻

Close Search

产品:

1

分享

产品系列:

可订购器件:

1

产品

状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Family

Configuration

VRRM (V)

IF(ave) (A)

VF (Max)

IFSM (A)

IR (Max) (µA)

Reference Price

FFSB10120A

Active

CAD Model

Pb

A

H

P

D2PAK2 (TO-263-2L)

1

260

REEL

800

Y

D1

Single

1200

10

1.75

90

400

$2.9516

More Details

Show More

1-25 of 25

Products per page

Jump to :

contact sales icon

Support on the go

Find and compare products, get support and connect with onsemi sales team.