Silicon Carbide (SiC) Schottky Diode – EliteSiC, 15 A, 1200 V, D1, TO-247-3L

Active

概览

Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability to silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost.

  • Industrial

  • UPS / ESS
  • Solar
  • EV Charger

  • Max Junction Temperature 175 °C
  • Avalanche Rated 80 mJ
  • High Surge Current Capacity
  • Positive Temperature Coefficient
  • No Reverse Recovery / No Forward Recovery

Tools and Resources

Product services, tools and other useful resources related to FFSH15120ADN-F155

产品列表

如需购买产品或样品,请先登录您的安森美账号。

搜寻

Close Search

产品:

1

分享

产品系列:

可订购器件:

1

产品

状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Family

Configuration

VRRM (V)

IF(ave) (A)

VF (Max)

IFSM (A)

IR (Max) (µA)

Reference Price

FFSH15120ADN-F155

Active

CAD Model

Pb

A

H

P

TO-247-3

NA

0

TUBE

450

Y

D1

Common Cathode

1200

15

1.75

80

200

$5.3997

More Details

Show More

1-25 of 25

Products per page

Jump to :

contact sales icon

Support on the go

Find and compare products, get support and connect with onsemi sales team.