Automotive Silicon Carbide (SiC) Schottky Diode, 650 V

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Silicon Carbide (SiC) Schottky Diodes use a completely newtechnology that provides superior switching performance andhigher reliability compared to Silicon. No reverse recoverycurrent, temperature independent switching characteristics, andexcellent thermal performance sets Silicon Carbide as the nextgeneration of power semiconductor. System benefits includehighest efficiency, faster operating frequency, increased powerdensity, reduced EMI, and reduced system size & cost

  • Automotive HEV-EV Onboard Chargers
  • Automotive HEV-EV DC-DC Converters
  • Automotive HEV-EV Onboard Chargers
  • Max Junction Temperature 175C
  • Avalanche Rated 144 mJ
  • High Surge Current Capacity
  • Positive Temperature Coefficient
  • Ease of Paralleling
  • No Reverse Recovery / No Forward Recovery
  • AEC-Q101 Qualified and PPAP capable

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FFSP3065B-F085

Active

Pb

A

H

P

TO-220-2

NA

0

TUBE

800

Y

D2

Single

650

30

1.7

120

160

$3.8778

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